Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si

2000 ◽  
Vol 76 (8) ◽  
pp. 1027-1029 ◽  
Author(s):  
C. Miesner ◽  
O. Röthig ◽  
K. Brunner ◽  
G. Abstreiter
2006 ◽  
Vol 100 (1) ◽  
pp. 013106 ◽  
Author(s):  
E. A. Zibik ◽  
A. M. Adawi ◽  
L. R. Wilson ◽  
A. Lemaître ◽  
J. W. Cockburn ◽  
...  

2005 ◽  
Vol 36 (3-6) ◽  
pp. 227-230 ◽  
Author(s):  
H. Pettersson ◽  
L. Landin ◽  
Ying Fu ◽  
M. Kleverman ◽  
M. Borgström ◽  
...  

1989 ◽  
Vol 149 ◽  
Author(s):  
G. H. Bauer ◽  
C. E. Nebel ◽  
M. B. Schubert ◽  
G. Schumm

ABSTRACTOptical and transport studies of both cb- and vb-tail states in a-Si1−xGex:H such as subband absorption (PDS), instationary photocurrent experiments (TOF, PTS) for electrons and holes, Modulated Photocurrent Spectroscopy (MPS), and Raman scattering have been performed. The main consequences of Ge-alloying into the a-Si:H network are i) an increase in cb-tail state density at the conduction band edge and in the exponential cb- tail even for small x (O<x<0.3), accompanied by ii) a rise in deep cb-tail and midgap states which to some extent can be reduced by appropriate deposition methods; iii) at the valence band side up to x≈0.3 the tail seems not to be affected at all and for 0.3<x<0.9 the vb-tail obviously can be kept similar to that of a-Si:H (Evo≈(50–60) meV). Halfwidths of Raman TO-like modes point to the existence of a rigid Si-network in O<x<0.3 in which Ge is incorporated and to a transition at x>0.35 into a Si-Ge compound structure with maximum disorder at x≈0.5.


2001 ◽  
Vol 224 (2) ◽  
pp. 497-502 ◽  
Author(s):  
P.W. Fry ◽  
D.J. Mowbray ◽  
I.E. Itskevich ◽  
M.S. Skolnick ◽  
J.A. Barker ◽  
...  

2004 ◽  
Vol 95 (8) ◽  
pp. 4042-4045 ◽  
Author(s):  
S. H. You ◽  
K. J. Hong ◽  
T. S. Jeong ◽  
C. J. Youn ◽  
J. S. Park ◽  
...  

2002 ◽  
Vol 80 (12) ◽  
pp. 2093-2095 ◽  
Author(s):  
T. Fromherz ◽  
W. Mac ◽  
A. Hesse ◽  
G. Bauer ◽  
C. Miesner ◽  
...  

2006 ◽  
Vol 3 (11) ◽  
pp. 3895-3899
Author(s):  
Y. Léger ◽  
L. Besombes ◽  
L. Maingault ◽  
H. Mariette

1999 ◽  
Vol 571 ◽  
Author(s):  
P.W. Fry ◽  
I.E. Itskevich ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
J.A. Barker ◽  
...  

ABSTRACTPhotocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, studied as a function of applied electric field, is used to probe the nature of the confined electronic states. A field asymmetry of the quantum confined Stark effect is observed, consistent with the dots possessing a permanent dipole moment. The sign of this dipole indicates that for zero field the hole wavefunction lies above that of the electron, in disagreement with the predictions of all recent calculations. Comparison with a theoretical model demonstrates that the experimentally determined alignment of the electron and hole can only be explained if the dots contain a nonzero and non-uniform Ga content. The role of two different carrier escape mechanisms, tunneling and thermal excitation, is studied.


2006 ◽  
Vol 88 (20) ◽  
pp. 201105 ◽  
Author(s):  
M. Simma ◽  
T. Fromherz ◽  
A. Raab ◽  
G. Springholz ◽  
G. Bauer

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