Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
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2010 ◽
Vol 56
(4(1))
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pp. 1256-1260
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2018 ◽
Vol 215
(23)
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pp. 1800455
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2008 ◽
Vol 20
(23)
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pp. 1923-1925
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2012 ◽
Vol 24
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pp. 909-911
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2005 ◽
Vol 23
(6)
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pp. 3214
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2001 ◽
Vol 183
(1)
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pp. 177-182
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