Determination of grain-boundary diffusion of Ag in nanocrystalline Cu by the Hwang–Balluffi method

2001 ◽  
Vol 89 (7) ◽  
pp. 3971-3975 ◽  
Author(s):  
Z. Erdélyi ◽  
Ch. Girardeaux ◽  
G. A. Langer ◽  
D. L. Beke ◽  
A. Rolland ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

scholarly journals Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd

2009 ◽  
Vol 289-292 ◽  
pp. 763-767 ◽  
Author(s):  
Z. Balogh ◽  
Z. Erdélyi ◽  
Dezső L. Beke ◽  
Alain Portavoce ◽  
Christophe Girardeaux ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Controlled Processes ◽  
Diffusion Controlled ◽  
Arrhenius Function ◽  
Data Points ◽  
Accumulation Kinetics

Diffusion controlled processes play a crucial role in the degradation of technical materials. At low temperatures the most significant of them is the diffusion along grain boundaries. In thin film geometry one of the best methods for determining the grain boundary (GB) diffusion coefficient of an impurity element is the Hwang-Balluffi method, in which a surface sensitive technique is used to follow the surface accumulation kinetics. Results of grain boundary diffusion measurements, carried out in our laboratory by this method in three different materials systems (Ag/Pd, Ag/Cu and Au/Ni) are reviewed. In case of Ag diffusion along Pd GBs the surface accumulation was followed by AES method. The data points can be well fitted by an Arrhenius function with an activation energy Q=0.99eV

Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

1981 ◽  
Vol 5 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
L. E. Trimble ◽  
C. J. Doherty ◽  
G. K. Celler
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Length ◽  
Grain Boundary Diffusion ◽  
Silicon Thin Films ◽  
P Diffusion ◽  
Ion Laser ◽  
Si Films

ABSTRACTGrain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

Determination of Grain Boundary Diffusion Parameters Based on Specified Model of Grain Boundary Diffusion and Combined Analysis of Radiotracer and Mössbauer Spectroscopy Data

2015 ◽  
Vol 5 ◽  
pp. 21-39 ◽  
Author(s):  
Vladimir V. Popov ◽  
A.V. Sergeev
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Model Specification ◽  
Radiotracer Technique ◽  
Combined Analysis ◽  
Additional Information ◽  
Diffusion Parameters ◽  
Fisher Model

The classical Fisher model of grain-boundary diffusion and the traditional method of determination of grain-boundary diffusion parameters by radiotracer technique combined with the serial-sectioning method are analyzed. The Fisher model specification based on the data of the emission Mössbauer spectroscopy is considered, and the additional information which can be extracted from the Mössbauer studies is discussed. The possibility of determination of grain-boundary diffusion parameters based on the combined analysis of the radiotracer technique and Mössbauer spectroscopy with the application of the specified Fisher model of grain-boundary diffusion is considered. This approach is demonstrated by an example of determination of grain-boundary diffusion of Co in W and Mo.

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