Simple, discriminative measurement technique for radon and thoron concentrations with a single scintillation cell

2002 ◽  
Vol 73 (1) ◽  
pp. 69-72 ◽  
Author(s):  
Shinji Tokonami ◽  
Mingli Yang ◽  
Hidenori Yonehara ◽  
Yuji Yamada
2011 ◽  
Author(s):  
Don C. Bragg ◽  
Lee E. Frelich ◽  
Robert T. Leverett ◽  
Will Blozan ◽  
Dale J. Luthringer

Author(s):  
Mark Kimball

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).


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