Insights into the stability of silicon cluster ions: Reactive etching with O2

2002 ◽  
Vol 117 (7) ◽  
pp. 3219-3223 ◽  
Author(s):  
D. E. Bergeron ◽  
A. W. Castleman
1990 ◽  
Vol 93 (8) ◽  
pp. 5709-5718 ◽  
Author(s):  
Urmi Ray ◽  
Martin F. Jarrold
Keyword(s):  

1999 ◽  
Vol 17 (4) ◽  
pp. 1531-1535 ◽  
Author(s):  
W. M. M. Kessels ◽  
C. M. Leewis ◽  
A. Leroux ◽  
M. C. M. van de Sanden ◽  
D. C. Schram

1991 ◽  
Vol 94 (4) ◽  
pp. 2631-2639 ◽  
Author(s):  
Urmi Ray ◽  
Martin F. Jarrold
Keyword(s):  

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2502-2507
Author(s):  
WAKANA NAKAGAWARA ◽  
HIRONORI TSUNOYAMA ◽  
ARI FURUYA ◽  
FUMINORI MISAIZU ◽  
KOICHI OHNO

We have examined chemical reactions of small silicon cluster ions [Formula: see text] for n = 7 - 16 with polar organic molecules M ( M = CH 3 CN , CD 3 OD , C 2 H 5 CN , and C 2 H 5 OH ). The intensities of the adsorption products [Formula: see text] for m = 1 and 2 were investigated as a function of n. We found for all polar molecules that the relative intensity of Si n M + to the unreacted [Formula: see text] is smaller for n = 11, 13, and 14, that is, the adsorption reactivity is smaller for these n than others. It was also commonly observed that the [Formula: see text] ion are more intense than neighboring n. We discussed the relationship of the reactivity with the geometrical structures and the stabilities of the bare [Formula: see text] ions and adsorbed [Formula: see text] ions, from theoretical calculations based on density functional theory.


1987 ◽  
Vol 86 (7) ◽  
pp. 4245-4257 ◽  
Author(s):  
Mary L. Mandich ◽  
Vladimir E. Bondybey ◽  
William D. Reents

1998 ◽  
Vol 72 (19) ◽  
pp. 2406-2408 ◽  
Author(s):  
Hiroyuki Yamamoto ◽  
Yuji Baba

1992 ◽  
Vol 96 (12) ◽  
pp. 9180-9190 ◽  
Author(s):  
Martin F. Jarrold ◽  
J. Eric Bower
Keyword(s):  

1991 ◽  
Vol 94 (4) ◽  
pp. 2618-2630 ◽  
Author(s):  
J. M. Alford ◽  
R. T. Laaksonen ◽  
R. E. Smalley
Keyword(s):  

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