Temperature dependence of the thermo-optical properties of water determined by thermal lens spectrometry

Recent improvements in the modeling of photo-induced thermo–optical–mechanical effects have broadened the application of photothermal techniques to a large class of solids and fluids. During laser excitation, changes in optical reflectivity due to temperature variation may affect the photothermal signal. In this study, the influence of the reflectivity change due to heating is analyzed for two pump–probe photothermal techniques, thermal lens and thermal mirror. A linear equation for the temperature dependence of the reflectivity is derived, and the solution is tested using optical properties of semi-transparent and opaque materials. For semi-transparent materials, the influence of the reflectivity change in photothermal signals is less than 0.01%, while for opaque materials it is lower than 3%.

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The effect of the LC mixtures with the different clearing point on temperature dependence of the electro-optical properties of polymer dispersed liquid crystals

Molecular Crystals and Liquid Crystals ◽

10.1080/15421406.2021.1934641 ◽

2021 ◽

pp. 1-14

Author(s):

Huimin Zhang ◽

Fei Li ◽

Kexuan Li ◽

Yongming Zhang ◽

Yuxin Peng ◽

...

Keyword(s):

Optical Properties ◽

Liquid Crystals ◽

Temperature Dependence ◽

Polymer Dispersed Liquid Crystals ◽

Polymer Dispersed ◽

Clearing Point

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Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

MRS Proceedings ◽

10.1557/proc-201-325 ◽

1990 ◽

Vol 201 ◽

Author(s):

Honglie Shen ◽

Genqing Yang ◽

Zuyao Zhou ◽

Guanqun Xia ◽

Shichang Zou

Keyword(s):

Optical Properties ◽

Silicon Nitride ◽

Temperature Dependence ◽

Optimal Condition ◽

Room Temperature ◽

Broad Band ◽

Photoluminescence Spectra ◽

Electrical And Optical Properties ◽

Spectrum Measurement ◽

Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

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