Development and process control of magnetic tunnel junctions for magnetic random access memory devices

2003 ◽  
Vol 93 (10) ◽  
pp. 8373-8375 ◽  
Author(s):  
Witold Kula ◽  
Jerome Wolfman ◽  
Kamel Ounadjela ◽  
Eugene Chen ◽  
William Koutny
SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.


2000 ◽  
Vol 87 (9) ◽  
pp. 6064-6066 ◽  
Author(s):  
K. Inomata ◽  
Y. Saito ◽  
K. Nakajima ◽  
M. Sagoi

1999 ◽  
Vol 85 (8) ◽  
pp. 5828-5833 ◽  
Author(s):  
S. S. P. Parkin ◽  
K. P. Roche ◽  
M. G. Samant ◽  
P. M. Rice ◽  
R. B. Beyers ◽  
...  

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