Measurement of the Extrinsic Room‐Temperature Minority Carrier Lifetime in GaP

1972 ◽  
Vol 43 (2) ◽  
pp. 500-507 ◽  
Author(s):  
R. Z. Bachrach ◽  
O. G. Lorimor
2005 ◽  
Vol 483-485 ◽  
pp. 373-376
Author(s):  
Ricardo Reitano ◽  
M. Zimbone ◽  
Paolo Musumeci ◽  
P. Baeri

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).


2019 ◽  
Vol 963 ◽  
pp. 313-317
Author(s):  
Jan Beyer ◽  
Nadine Schüler ◽  
Jürgen Erlekampf ◽  
Birgit Kallinger ◽  
Patrick Berwian ◽  
...  

Temperature dependent microwave detected photoconductivity MDP and time-resolved photoluminescence TRPL were employed to investigate the carrier lifetime in CVD grown 4H-SiC epilayers of different thickness. The minority carrier lifetime may be found from both theMDP and defect PL decay at room temperature for all epilayers, whereas the near bandedge emission (NBE) decay is much faster for thin epilayers (<17 μm) due to the substrate proximity and only follows the minority carrier lifetime for thicker samples at lower excess carrier concentrations.


1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  

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