Temperature Dependence of Luminescence Intensity of Tb3+ Complexes

1970 ◽  
Vol 52 (9) ◽  
pp. 4912-4914 ◽  
Author(s):  
R. W. Harrigan ◽  
G. A. Crosby
Keyword(s):  
Temperature Dependence ◽  
Luminescence Intensity

The temperature dependence of luminescence intensity on GaAs1-xPx:N

1982 ◽  
Vol 70 (2) ◽  
pp. 423-431 ◽  
Author(s):  
R. Stegmann ◽  
B. Kloth ◽  
G. Oelgart
Keyword(s):  
Temperature Dependence ◽  
Luminescence Intensity

scholarly journals Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Temperature Dependence ◽  
Layer Thickness ◽  
Luminescence Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Excitation Rate ◽  
Erbium Doped ◽  
Order Of Magnitude ◽  
Er Doped

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Erbium Implantation in Silicon: A Way Towards Si-Based Optoelectronics

1993 ◽  
Vol 316 ◽  
Author(s):  
F. Priolo ◽  
G. Franzó ◽  
S. Coffa ◽  
A. Polman ◽  
V. Bellani ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Recent Work ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Temperature Range ◽  
Excitation Processes ◽  
Co Doped ◽  
Electro Luminescence

ABSTRACTIn this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It is shown that O co-implantation plays a key role both in providing Er with the appropriate chemical surrounding and in allowing the incorporation of high Er concentrations in thick Si layers without the formation of twins and/or precipitates. The luminescence intensity in Er and O co-implanted samples shows a much weaker temperature dependence (a decrease by a factor of 30 from 77K to 300K) than in samples without O (a decrease by 3 orders of magnitude in the same temperature range). This allowed us to observe room temperature photo- and electro-luminescence in Er and O co-doped samples. The temperature dependence of the luminescence in these samples has been determined to be due to non-radiative de-excitation processes. These data are reported and discussed.

Temperature dependence of luminescence intensity in ZnMoO 4 crystals

2017 ◽  
Vol 89 ◽  
pp. 139-149 ◽  
Author(s):  
V.Ya. Degoda ◽  
Ya.P. Kogut ◽  
I.M. Moroz ◽  
F.A. Danevich ◽  
S.G. Nasonov ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Luminescence Intensity

Temperature dependence of luminescence intensity and decay times in C60 single crystal

1996 ◽  
Vol 78 ◽  
pp. 449-452 ◽  
Author(s):  
A. Kolmakov ◽  
V. Stankevitch ◽  
N. Svechnikov ◽  
P. Dudin ◽  
N. Artemev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Luminescence Intensity ◽  
Decay Times
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