SURFACE LUMINESCENCE OF A2B6 SEMICONDUCTOR QUANTUM DOTS (REVIEW)

Semiconductor zero-dimensional nanocrystals – quantum dots (QDs) – have been increasingly used in various fields of opto- and nanoelectronics in recent decades. This is because of the exciton nature of their luminescence, which can be controlled via the well known quantum-dimensional effect. At the same time, at small nanocrystall sizes, the influence of the surface on the optical and structural properties of nanocrystals increases significantly. The presence of broken bonds of surface atoms and point defects – vacancies and interstial atoms – can both weaken the exciton luminescence and create new effective channels of radiant luminescence. In some cases, these surface luminescence becomes dominant, leading to optical spectra broadening up to the quasi-white light. The nature of such localized states often remains unestablished due to the large number of the possible sorts of defects in both of QD and its surrounding. In contrast to exciton luminescence, which can be properly described within effective-mass approximations, the optical properties of defects relay on chemical nature of both defect itsself and its surrounding, what cannot be provided by “hydrogen-type coulomb defect” approximation. Moreover, charge state and related to this lattice relaxation must be taken into account, what requires an application of atomistic approach, such as Density functioal theory (DFT). Therefore, this review is devoted to the study of surface (defect) states and related luminescence, as well as the analysis of possible defects in nanocrystals of semiconductor compounds A2B6 (CdS, CdZnS, ZnS), responsible for luminescence processes, within ab initio approach. The review presents the results of the authors' and literature sources devoted to the study of the luminescent characteristics of ultra-small (<2 nm) QDs.

Energy Structure and Luminescence of CeF3 Crystals

The results of the calculation of the energy band structure and luminescent research of CeF3 crystals are presented. The existence of two 5d1 and 5d2 subbands of the conduction band genetically derived from 5d states of Ce3+ ions with different effective electron masses of 4.9 me and 0.9 me, respectively, is revealed. The large electron effective mass in the 5d1 subband facilitates the localization of electronic excitations forming the 4f-5d cerium Frenkel self-trapped excitons responsible for the CeF3 luminescence. The structure of the excitation spectra of the exciton luminescence peaked at 290 nm, and the defect luminescence at 340 nm confirms the aforementioned calculated features of the conduction band of CeF3 crystals. The peculiarities of the excitation spectra of the luminescence of CaF2:Ce crystals dependent on the cerium concentration are considered with respect to the phase formation possibility of CeF3.

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Spatial distribution of luminescence characteristics of CVD-ZnSe doped with Aluminum and both Aluminum and Iron by thermal diffusion were studied. The diffusion method leads to formation of two areas in crystal volume: (1) area with high aluminum concentration in which the luminescence of defective-impurity centers (DICs) dominates and exciton luminescence is absent and (2) area with low aluminum concentration in which exciton luminescence dominates. The border of two areas recognized on luminescence map is sharp that not corresponded to diffusion nature. The result is explained by assuming the anomalous nature of aluminum diffusion, leading to a sharp change in the aluminum concentration at a certain distance from the doping surface. Method of aluminum doping process applied in present paper leaded to weakens of well-known luminescence suppression effect by iron ions in ZnSe.

Thioglycolic Acid FTIR Spectra on Ag2S Quantum Dots Interfaces

The mechanism features of colloidal quantum dots (QDs) passivation with thioglycolic acid molecules (TGA) for cases of different luminescent properties is considered using FTIR. This problem is considered based on FTIR spectra analysis for various ionic forms of TGA. Experimental TGA molecules FTIR spectra is interpreted, basing on the data on modeling of TGA vibrational modes, realized in the framework of density functional method (DFT /B3LYP/6-31+G(d)) taking into account the vibrations anharmonicity of every functional group. This approach provides a significant improvement in the agreement between the experimental and calculated data. FTIR spectra of Ag 2 S/TGA QDs with exciton and recombination luminescence are differ from each other and B “freeB” TGA molecules. The ν ( S − H ) TGA peak (2559 cm − 1 ) disappears in FTIR spectra of Ag 2 S/TGA QD samples. This fact indicates the interactions between TGA thiol group and dangling bonds of Ag 2 S nanocrystals. Ag 2 S QDs passivation with TGA molecules leads to emergence ν a s (COO − ) (1584 cm − 1 ) and ν s (COO − ) (1387 cm − 1 ) peaks. It indicates TGA adsorption in ionic form. For Ag 2 S/TGA QDs with exciton luminescence we observed (a) significant low-frequency shift of ν s (COO − ) peak from 1388 cm − 1 to 1359 cm − 1 and high-frequency shift of ν a s (COO − ) peak from 1567 cm − 1 to 1581 cm − 1 ; (b) change in the ratio of intensities of ν a s (COO − ) and ν s (COO − ) vibrations. This feature is caused by the change in the symmetry of TGA molecules due to passivation of Ag 2 S quantum dots.For Ag 2 S/TGA QDs with recombination luminescence, the insignificant high-frequency shift of 7–10 cm − 1 for ν a s (COO − ) at 1567 cm − 1 and low-frequency shift of 3–5 cm − 1 for ν s (COO − ) at 1388 cm − 1 , probably caused by the interaction of thiol with Ag 2 S surface is observed. Using FTIR spectra, it was found that IR luminescence photodegradation is also accompanied by changes in the thioglycolic acid molecules, which capped Ag 2 S QDs. In the case of Ag 2 S QDs with exciton luminescence, the degradation process is non-reversible. It is accompanied by TGA photodegradation with the formation of α -thiol-substituted acyl radical (S-CH 2 -CO • ) TGA.