Noise Performance at Cryogenic Temperature of Microwave SiGeC Low Noise Amplifier using BiCMOS Technology

2005 ◽  
Author(s):  
S. Pruvost
ETRI Journal ◽  
2020 ◽  
Vol 42 (5) ◽  
pp. 781-789
Author(s):  
Woojin Chang ◽  
Jong‐Min Lee ◽  
Seong‐Il Kim ◽  
Sang‐Heung Lee ◽  
Dong Min Kang

Author(s):  
V.J. Patel ◽  
H.S. Axtell ◽  
C.L. Cerny ◽  
G.L. Creech ◽  
R.G. Drangmeister ◽  
...  

2020 ◽  
Vol 9 (2) ◽  
pp. 272
Author(s):  
G. Thirunavukkarasu ◽  
G. Murugesan

The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.  


Author(s):  
Katharina Kolb ◽  
Julian Potschka ◽  
Tim Maiwald ◽  
Klaus Aufinger ◽  
Marco Dietz ◽  
...  

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