The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices
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2006 ◽
Vol 373
(1)
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pp. 28-32
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Keyword(s):
Keyword(s):
2011 ◽
Vol 56
(7)
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pp. 591-597
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Keyword(s):
2014 ◽
Vol 61
(S1)
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pp. S204-S207