New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Dynamical decoupling of electron spins in phosphorus-doped silicon

2011 ◽  
Vol 56 (7) ◽  
pp. 591-597 ◽  
Author(s):  
Xing Rong ◽  
Ya Wang ◽  
JiaHui Yang ◽  
JinXian Zhu ◽  
WanJie Xu ◽  
...  
Keyword(s):  
Electron Spins ◽  
Dynamical Decoupling ◽  
Doped Silicon ◽  
Phosphorus Doped

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress

scholarly journals Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
H.-W. Hübers ◽  
S. G. Pavlov ◽  
S. A. Lynch ◽  
Th. Greenland ◽  
K. L. Litvinenko ◽  
...  
Keyword(s):  
Isotope Effect ◽  
Doped Silicon ◽  
Phosphorus Doped

Stacked Diodes for Pulsed Power Applications: New Process Integration Scheme

2021 ◽  
Vol MA2021-02 (31) ◽  
pp. 1868-1868
Author(s):  
Alex Usenko ◽  
Anthony N Caruso ◽  
Stteven L Bellinger
Keyword(s):  
Process Integration ◽  
Pulsed Power ◽  
Integration Scheme ◽  
New Process

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion
Sign in / Sign up

Export Citation Format

Share Document