MQDT/R-Matrix Floquet Method For Dielectronic Recombination

2006 ◽  
Author(s):  
V. Stancalie
Keyword(s):  
Dielectronic Recombination ◽  
R Matrix ◽  
Floquet Method

scholarly journals Laser-Assisted Electron-Atom Collisions

1991 ◽  
Vol 11 (3-4) ◽  
pp. 273-277
Author(s):  
C. J. Joachain
Keyword(s):  
Internal Structure ◽  
Cross Sections ◽  
Laser Field ◽  
Perturbative Approach ◽  
R Matrix ◽  
Theoretical Methods ◽  
Electron Atom ◽  
Floquet Method ◽  
Collision Cross Sections ◽  
Atomic States

The theoretical methods which have been developed to analyze laser-assisted electron-atom collisions are reviewed. Firstly, the scattering of an electron by a potential in the presence of a laser field is considered. The analysis is then generalized to laser-assisted collisions of electrons with “real” atoms having an internal structure. Two methods are discussed: a semi-perturbative approach suitable for fast incident electrons and a fully non-perturbative theory—the R-matrix-Floquet method—which is applicable to the case of slow incident electrons. In particular it is shown how the dressing of the atomic states by the laser field can affect the collision cross sections.

The calculation of molecular multiphoton processes using the R-matrix-Floquet method

1998 ◽  
Vol 114 (1-3) ◽  
pp. 27-41 ◽  
Author(s):  
J. Colgan ◽  
D.H. Glass ◽  
K. Higgins ◽  
P.G. Burke
Keyword(s):  
Multiphoton Processes ◽  
R Matrix ◽  
Floquet Method

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

DIELECTRONIC RECOMBINATION IN THE AVERAGE-ATOM MODEL

1988 ◽  
Vol 49 (C1) ◽  
pp. C1-215-C1-215
Author(s):  
R. M. MORE ◽  
G. B. ZIMMERMAN ◽  
Z. ZINAMON
Keyword(s):  
Dielectronic Recombination ◽  
Atom Model ◽  
Average Atom Model

EXPERIMENTS ON ELECTRON IMPACT EXCITATION AND DIELECTRONIC RECOMBINATION AT HARVARD-SMITHSONIAN

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-405-C1-409
Author(s):  
L. D. GARDNER ◽  
J. L. KOHL ◽  
D. W. SAVIN ◽  
A. R. YOUNG
Keyword(s):  
Electron Impact ◽  
Dielectronic Recombination ◽  
Impact Excitation ◽  
Electron Impact Excitation
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