scholarly journals Magnetic memory and current amplification devices using moving domain walls

2006 ◽  
Vol 89 (12) ◽  
pp. 122507 ◽  
Author(s):  
S. E. Barnes ◽  
J. Ieda ◽  
S. Maekawa
Keyword(s):  
Domain Walls ◽  
Magnetic Memory ◽  
Moving Domain ◽  
Current Amplification

scholarly journals Current vortices and magnetic fields driven by moving polar twin boundaries in ferroelastic materials

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Guangming Lu ◽  
Suzhi Li ◽  
Xiangdong Ding ◽  
Jun Sun ◽  
Ekhard K. H. Salje
Keyword(s):  
Magnetic Fields ◽  
Speed Of Sound ◽  
Magnetic Moment ◽  
Domain Walls ◽  
Domain Boundary ◽  
Polar Vortex ◽  
Magnetic Memory ◽  
Magnetic Element ◽  
Twin Boundaries ◽  
Moving Domain

Abstract Ferroelastic twin boundaries often have properties that do not exist in bulk, such as superconductivity, polarity etc. Designing and optimizing domain walls can hence functionalize ferroelastic materials. Using atomistic simulations, we report that moving domain walls have magnetic properties even when there is no magnetic element in the material. The origin of a robust magnetic signal lies in polar vortex structures induced by moving domain walls, e.g., near the tips of needle domains and near domain wall kinks. These vortices generate displacement currents, which are the origin of magnetic moments perpendicular to the vortex plane. This phenomenon is universal for ionic crystals and holds for all ferroelastic domain boundaries containing dipolar moments. The magnetic moment depends on the speed of the domain boundary, which can reach the speed of sound under strong mechanical forcing. We estimate that the magnetic moment can reach several tens of Bohr magnetons for a collective thin film of 1000 lattice planes and movements of the vortex by the speed of sound. The predicted magnetic fields in thin slabs are much larger than those observed experimentally in SrTiO3/LaAlO3 heterostructures, which may be due to weak (accidental) forcing and slow changes of the domain patterns during their experiments. The dynamical multiferroic properties of ferroelastic domain walls may have the potential to be used to construct localized magnetic memory devices in future.

Structure of Moving Domain Walls in Magnetic Materials

1971 ◽  
Vol 19 (8) ◽  
pp. 274-276 ◽  
Author(s):  
Ernst Schlömann
Keyword(s):  
Magnetic Materials ◽  
Domain Walls ◽  
Moving Domain

scholarly journals Магнитостатическая энергия доменных стенок в одноосных пленках конечных размеров

2019 ◽  
Vol 61 (10) ◽  
pp. 1767
Author(s):  
П.М. Ветошко ◽  
Ф.П. Ветошко ◽  
В.Г. Шавров ◽  
В.И. Щеглов
Keyword(s):  
Domain Walls ◽  
Magnetic Sensors ◽  
Magnetization Distribution ◽  
Magnetic Memory ◽  
Spintronic Devices ◽  
Domain Structures ◽  
Magnetic Elements ◽  
Uniform Magnetization ◽  
Equilibrium Configurations ◽  
Equivalent Currents

AbstractThe solution to the problem of calculating the magnetostatic interaction energy of domain walls in uniaxial magnetics with a uniform magnetization distribution inside the domains is given. In carrying out the calculations, the principle of equivalent currents is used, assuming a uniform distribution of magnetization and its representation by equivalent currents flowing along the domain walls and along the surface. Analytical expressions for the mutual induction of two rectangular conductors with an arbitrary aspect ratio have been obtained. Results may be helpful in determining equilibrium configurations of domain structures in magnetic elements of spintronic devices, magnetic sensors and magnetic memory.

Behavior of Magnetic Domains in Single Magnetic Nanowire with Shallow Trench along Length Direction Observed by Magnetic Force Microscopy

2013 ◽  
Vol 1527 ◽  
Author(s):  
Mitsunobu Okuda ◽  
Yasuyoshi Miyamoto ◽  
Eiichi Miyashita ◽  
Naoto Hayashi
Keyword(s):  
Domain Walls ◽  
Hard Disk Drives ◽  
Magnetic Domain ◽  
Magnetic Memory ◽  
Magnetic Nanowires ◽  
Magnetic Domains ◽  
Electric Circuits ◽  
Recording Density ◽  
Magnetic Nanowire ◽  
Length Direction

ABSTRACTWe have proposed new magnetic memories using parallel-aligned nanowires without mechanical moving parts, in order to achieve the ultra high transfer rate of more than 144 Gbps for Super Hi-Vision TV. In the magnetic memory using nanowires, the data are stored as the magnetic domains with up or down magnetization in magnetic nanowires, and the domains are shifted quite faster by applying optimum current along the nanowire direction for data writing and reading purpose. Since the electric circuits and the insulation space between the neighbor nanowires are necessary for moving the magnetic domain walls, the areal recording density is essentially reduced as compared with that of conventional hard disk drives. In this study, in order to increase the areal recording density of magnetic nanowire memory, we have tried to act one magnetic nanowire as the virtual multiple data tracks. The shallow scratched trench was introduced using scanning probe microscopy along the length direction on the surface of a single nanowire to form multiple internal tracks, and we have succeeded in realizing a couple of virtual tracks states.

Moving domain walls in ferromagnetic films with parallel anisotropy

1979 ◽  
Vol 40 (3) ◽  
pp. 223-231 ◽  
Author(s):  
A. Aharoni ◽  
J. P. Jakubovics
Keyword(s):  
Domain Walls ◽  
Ferromagnetic Films ◽  
Moving Domain

DOMAIN BOUNDARIES IN FERROELECTRICS

2012 ◽  
Vol 02 (04) ◽  
pp. 1230013 ◽  
Author(s):  
A. S. SIDORKIN
Keyword(s):  
Effective Mass ◽  
Domain Walls ◽  
Ferroelectric Materials ◽  
Elasticity Coefficient ◽  
Potential Relief ◽  
Free Carriers ◽  
Domain Boundaries ◽  
Different Types ◽  
Moving Domain ◽  
The Continuum

Present paper is a brief review of the information and existing approaches in the study of domain walls in ferroelectric materials. In the framework of the continuum approach the structure of 180° and 90° domain walls was considered. The results of calculation of width and energy of domain walls were compared with those obtained from ab initio calculations and experimental data. Factors conducive to the broadening of domain boundaries are discussed such as profile temperature fluctuation, capture to nearby defects and surface impact. The structure of charged domain walls was considered under the conditions of screening by free carriers. The structure and characteristics of the moving domain wall are discussed: the local effective mass, the top speed and the mobility. The lateral motion of domain walls in the lattice potential relief in the general case creeping mode is investigated. The factors that control the macroscopic movement of domain walls are studied: an effective quasi-elasticity coefficient and nonlocal effective mass associated with involvement in the movement of the elastic medium surrounding wall. Natural frequency of translational oscillations of domain boundaries and the influence of the size effect were estimated. The interaction of domain walls with different types of defects and their effect on the deformation profile and features of the motion of domain walls are considered.

Dynamic Topological 3D Structures in Moving Domain Walls in Permalloy Films of Various Thicknesses

2019 ◽  
Vol 120 (13) ◽  
pp. 1299-1303
Author(s):  
V. V. Zverev ◽  
E. Zh. Baykenov ◽  
I. M. Izmozherov
Keyword(s):  
Domain Walls ◽  
3D Structures ◽  
Moving Domain
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