High speed silicon photonic crystal waveguide modulator for low voltage operation

2007 ◽  
Vol 90 (7) ◽  
pp. 071105 ◽  
Author(s):  
Lanlan Gu ◽  
Wei Jiang ◽  
Xiaonan Chen ◽  
Li Wang ◽  
Ray T. Chen
2008 ◽  
Vol 16 (6) ◽  
pp. 4177 ◽  
Author(s):  
Jan-Michael Brosi ◽  
Christian Koos ◽  
Lucio C. Andreani ◽  
Michael Waldow ◽  
Juerg Leuthold ◽  
...  

2005 ◽  
Vol 87 (22) ◽  
pp. 221105 ◽  
Author(s):  
Yongqiang Jiang ◽  
Wei Jiang ◽  
Lanlan Gu ◽  
Xiaonan Chen ◽  
Ray T. Chen

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Xingyu Zhang ◽  
Amir Hosseini ◽  
Harish Subbaraman ◽  
Jingdong Luo ◽  
Alex A.K. Jen ◽  
...  

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


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