Erratum: “Effect of substrate temperature on pulsed laser ablated Zn0.95Co0.05O diluted magnetic semiconducting thin films” [J. Appl. Phys. 101, 073902 (2007)]

2007 ◽  
Vol 101 (11) ◽  
pp. 119902
Author(s):  
Q. Liu ◽  
C. L. Yuan ◽  
C. L. Gan ◽  
G. C. Han
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Diluted Magnetic ◽  
Semiconducting Thin Films

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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