Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

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Vol 91 (5) ◽  
pp. 052503 ◽  
Author(s):  
M. Fukuda ◽  
M. Yamanouchi ◽  
F. Matsukura ◽  
H. Ohno
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Domain Wall Motion ◽  
Tunnel Magnetoresistance

scholarly journals Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

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V. Cros ◽  
A. Anane ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Domain Wall Motion ◽  
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Single Shot Detection of the Magnetic Domain Wall Motion by Using Tunnel Magnetoresistance Effect

2008 ◽  
Vol 1 ◽  
pp. 061302 ◽  
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Kouta Kondou ◽  
Norikazu Ohshima ◽  
Shinya Kasai ◽  
Yoshinobu Nakatani ◽  
Teruo Ono
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Magnetic Domain ◽  
Domain Wall Motion ◽  
Single Shot ◽  
Magnetic Domain Wall ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance ◽  
Shot Detection

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

2021 ◽  
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Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
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Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance
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