Spin-orbit splitting of a hydrogenic donor impurity in GaAs∕GaAlAs quantum wells

2008 ◽  
Vol 92 (2) ◽  
pp. 022102 ◽  
Author(s):  
Shu-Shen Li ◽  
Jian-Bai Xia
2009 ◽  
Vol 4 (11) ◽  
pp. 1315-1318 ◽  
Author(s):  
Jun Wang ◽  
Shu-Shen Li ◽  
Yan-Wu Lü ◽  
Xiang-Lin Liu ◽  
Shao-Yan Yang ◽  
...  

2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  

1995 ◽  
Vol 395 ◽  
Author(s):  
T. Uenoyama ◽  
M. Suzuki

ABSTRACTOptical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.


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