Electrical and optical characterization of porous silicon∕p-crystalline silicon heterojunction diodes

2008 ◽  
Author(s):  
F. Fonthal ◽  
T. Trifonov ◽  
A. Rodríguez ◽  
C. Goyes ◽  
L. F. Marsal ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Optical Characterization ◽  
Heterojunction Diodes

Electrical and optical characterization of crystalline silicon/porous silicon heterojunctions

1997 ◽  
Vol 46 (4) ◽  
pp. 261-269 ◽  
Author(s):  
C. Palsule ◽  
S. Liu ◽  
S. Gangopadhyay ◽  
M. Holtz ◽  
D. Lamp ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Optical Characterization ◽  
Silicon Heterojunctions

Optical characterization of porous silicon and crystalline silicon by the Kramers-Kronig method

2007 ◽  
Vol 46 (4) ◽  
pp. 495 ◽  
Author(s):  
Abdollah MortezaAli ◽  
Reza S. Dariani ◽  
Saeideh Asghari ◽  
Zeynel Bayindir
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Optical Characterization

Optical Characterization of Porous Silicon Multilayers

2018 ◽  
pp. 773-784
Author(s):  
Ugur Cem Hasar ◽  
Ibrahim Yucel Ozbek ◽  
Tehvit Karacali
Keyword(s):  
Porous Silicon ◽  
Optical Characterization

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Fabrication and Optical Characterization of Multi-Encoded Rugate Porous Silicon/Polymer Composite

2014 ◽  
Vol 14 (8) ◽  
pp. 5844-5848
Author(s):  
Bomin Cho ◽  
Sung-Gi Lee ◽  
Hee-Gweon Woo ◽  
Honglae Sohn
Keyword(s):  
Porous Silicon ◽  
Polymer Composite ◽  
Optical Characterization

Fabrication and optical characterization of a porous silicon distributed Bragg reflector

2013 ◽  
Vol 62 (1) ◽  
pp. 132-135 ◽  
Author(s):  
Bong-Ju Lee ◽  
Bomin Cho ◽  
Moonjoo Koh ◽  
Honglae Sohn ◽  
Young Chun Ko
Keyword(s):  
Porous Silicon ◽  
Optical Characterization ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix

2004 ◽  
Vol 27 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
E. Leoni ◽  
R. El Bouyadi ◽  
L. Martinelli ◽  
G. Regula ◽  
E. Ntsoenzok ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Optical Characterization ◽  
Silicon Matrix
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