Fabrication and optical characterization of p-type single macro-porous silicon for detection of nano-sized functionalized superparamagnetic beads

2012 ◽  
Vol 358 (17) ◽  
pp. 2327-2330 ◽  
Author(s):  
Pil Ju Ko ◽  
Ryousuke Ishikawa ◽  
Tsukasa Takamura ◽  
Honglae Sohn ◽  
Adarsh Sandhu
2000 ◽  
Vol 180 (1) ◽  
pp. 195-199 ◽  
Author(s):  
L. Gravier ◽  
H. Makino ◽  
K. Arai ◽  
H. Sasaki ◽  
K. Kimura ◽  
...  

2018 ◽  
pp. 773-784
Author(s):  
Ugur Cem Hasar ◽  
Ibrahim Yucel Ozbek ◽  
Tehvit Karacali

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez

2014 ◽  
Vol 14 (8) ◽  
pp. 5844-5848
Author(s):  
Bomin Cho ◽  
Sung-Gi Lee ◽  
Hee-Gweon Woo ◽  
Honglae Sohn

2003 ◽  
Vol 433-436 ◽  
pp. 337-340 ◽  
Author(s):  
Matthias Bickermann ◽  
Roland Weingärtner ◽  
Z.G. Herro ◽  
Dieter Hofmann ◽  
Ulrike Künecke ◽  
...  

2013 ◽  
Vol 62 (1) ◽  
pp. 132-135 ◽  
Author(s):  
Bong-Ju Lee ◽  
Bomin Cho ◽  
Moonjoo Koh ◽  
Honglae Sohn ◽  
Young Chun Ko

1992 ◽  
Vol 283 ◽  
Author(s):  
T. R. Cottrell ◽  
J. B. Benziger ◽  
J. C. Yee ◽  
J. K. M. Chunt ◽  
A. B. Bocarslyt

ABSTRACTOrganic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.


2011 ◽  
Vol 209 (2) ◽  
pp. 294-296 ◽  
Author(s):  
Jang-Ho Park ◽  
Ho-Yeon Seo ◽  
Sang-Hun Jeong ◽  
Byung-Teak Lee

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