Role of oxygen partial pressure and seed layer chemistry in flux mediated epitaxy of single phase multiferroic BiFeO3 thin films

2008 ◽  
Vol 93 (19) ◽  
pp. 192906 ◽  
Author(s):  
Varatharajan Anbusathaiah ◽  
Ching Jung Cheng ◽  
Sung Hwan Lim ◽  
Makoto Murakami ◽  
Lourdes G. Salamanca-Riba ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Seed Layer ◽  
Single Phase ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

Preparation of YBa2Cu4O8 Thin Films by MOCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
H. Sakai ◽  
H. Hayashi ◽  
K. Uehara ◽  
N. Kubota ◽  
T. Sugimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Grain Growth ◽  
Single Phase ◽  
Film Surface ◽  
Surface Step ◽  
Composition Ratio ◽  
Sem And Tem

ABSTRACTPreparation processing to obtain 124 single phase films has been studied by MOCVD. The YBCO thin films which were fabricated on MgO(100) and SrTiO3(100) substrates, respectively, were obtained under both conditions of Ts(temperature of susceptor)=800°C and Po2(oxygen partial pressure)=17.5torr. It was found that the oriented peaks of 124 c-axis and of 123 a-axis were more prominent than others at the composition ratio(Y/Ba/Cu=l.0/2.7/4.7), using the MgO(100) substrates. The 123 a-axis oriented grain was observed by using SEM and TEM. We have obtained thin films which were dominant in the 124 phase on the SrTiO3(100) substrates. The film surface morphology on the SrTiO3(100) substrate was smoother than that on the MgO(100) substrate. The origin of a-axis oriented grain growth was explained by the surface step(about 10 À) on MgO(100).

Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure

2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

2013 ◽  
Vol 25 (2) ◽  
pp. 772-777 ◽  
Author(s):  
Saurabh Kumar Pandey ◽  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
M. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam

Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications

2021 ◽  
Author(s):  
K Naveen Kumar ◽  
Habibuddin Shaik ◽  
Amulya Pawar ◽  
L.N. Chandrashekar ◽  
Sheik Abdul Sattar ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Wo3 Thin Films
Sign in / Sign up

Export Citation Format

Share Document