Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

2013 ◽  
Vol 25 (2) ◽  
pp. 772-777 ◽  
Author(s):  
Saurabh Kumar Pandey ◽  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
M. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

2016 ◽  
Vol 619 ◽  
pp. 86-90 ◽  
Author(s):  
Firdous A. Tantray ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
Joseph T. Andrews ◽  
Pratima Sen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Effect Of Oxygen

Effect of oxygen partial pressure on the behavior of dual ion beam sputtered ZnO thin films

2013 ◽  
Vol 28 (8) ◽  
pp. 085014 ◽  
Author(s):  
Saurabh Kumar Pandey ◽  
Sushil Kumar Pandey ◽  
Uday P Deshpande ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Effect Of Oxygen

Ion beam sputter deposition of YBa2Cu3O7−δ thin films

1993 ◽  
Vol 8 (12) ◽  
pp. 3032-3042 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
High Oxygen ◽  
Ion Beam Sputtering ◽  
Film Properties ◽  
High Oxygen Partial Pressure ◽  
Beam Sputtering

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

scholarly journals Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

2016 ◽  
Vol 755 ◽  
pp. 012053
Author(s):  
Firdous A Tantray ◽  
Romita Chouhan ◽  
Swati Rajput ◽  
Arpana Agrawal ◽  
Joseph T Andrews ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Effect Of Oxygen

Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

2011 ◽  
Vol 1292 ◽  
Author(s):  
Seiji Nakashima ◽  
Yosuke Tsujita ◽  
Hironori Fujisawa ◽  
Jung Min Park ◽  
Takeshi Kanashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Domain Switching ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Mixed Phase ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

ABSTRACTBiFeO3 (BFO) thin films have been deposited on SrRuO3/SrTiO3 (001) substrate by using ion beam sputtering process. At low oxygen partial pressure of 11 m Pa, rhombohedral and large c/a mixed phase thin film have been obtained in spite of rhombohedral BFO single phase formation at high oxygen partial pressure of 73 mPa. From wide area 2θ-Ψ mappings, diffraction peaks from large c/a phase BFO thin film were obtained with the same extinction rule as those of rhombohedral BFO. Reciprocal space mappings around BFO (003) and BFO (103) spots indicate that lattice parameters of large c/a phase BFO were a = 0.381 nm and c = 0.461 nm (c/a =1.22), respectively. Moreover ferroelectric domain switching could be observed in both of rhombohedral BFO and mixed phase BFO thin films.

scholarly journals Effect of Oxygen Partial Pressure on Crystal Structure, Oxygen Vacancy, and Surface Morphology of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition

Oxygen ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 62-72
Author(s):  
Gasidit Panomsuwan ◽  
Nagahiro Saito
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Oxygen Vacancy ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Compressive Strain ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (PO2) was varied at 1.5 × 10−5, 1.5 × 10−4, and 1.5 × 10−3 Torr during the growth. The effects of PO2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that PO2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (a- and b-axes) and a tensile strain along the growth direction (c-axis). The crystalline quality of STO films was slightly improved at higher PO2. Oxygen vacancy was favorably created in the STO lattice grown at low PO2 due to a lack of oxygen during growth and became suppressed at high PO2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti3+ instead of Ti4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high PO2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.

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