Dependence of the polar phonon limited mobility in the two‐dimensional electron gas in GaInAs/InP heterostructures on hydrostatic pressure and carrier concentration

1987 ◽  
Vol 62 (10) ◽  
pp. 4296-4298
Author(s):  
M. A. Fisher ◽  
A. R. Adams ◽  
D. Lancefield ◽  
M. J. Kane ◽  
L. L. Taylor ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Carrier Concentration ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Limited Mobility ◽  
Dimensional Electron Gas

Skyrmion Excitations in a Two-Dimensional Electron Gas under Hydrostatic Pressure

1996 ◽  
Vol 198 (1) ◽  
pp. 259-266 ◽  
Author(s):  
D. K. Maude ◽  
M. Potemski ◽  
M. Henini ◽  
J. C. Portal ◽  
L. Eaves ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

GaAs–AlAs heterojunctions under hydrostatic pressure

1989 ◽  
Vol 67 (4) ◽  
pp. 311-314
Author(s):  
J. Beerens ◽  
G. Grégoris ◽  
D. Lavielle ◽  
S. Ben Amor ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electron Gas ◽  
Two Dimensional ◽  
Relative Movement ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Concentration ◽  
X Band ◽  
Dimensional Electron Gas

We report magnetotransport measurements made at 4.2 K on GaAs–AlAs modulation-doped heterojunctions under hydrostatic pressure. The two-dimensional electron-gas concentration is observed to decrease linearly from 1.5 × 1011 cm−2 to 0 cm−2 when the pressure is increased from 1 bar to [Formula: see text] (1 bar = 100 kPa). The relative movement, induced by pressure, between the X band in AlAs (dEX/dP = −1.7 meV/kbar) and the Γ band in GaAs (dEΓ/dP = 10.7 meV/kbar) can account for about 65% of the decrease. Different possibilities are examined in order to interpret the remaining 35%.

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