Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality

1987 ◽  
Vol 62 (8) ◽  
pp. 3398-3404 ◽  
Author(s):  
L. M. Garverick ◽  
J. H. Comfort ◽  
T. R. Yew ◽  
R. Reif ◽  
F. A. Baiocchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Low Dose ◽  
Ion Bombardment ◽  
Surface Cleaning ◽  
Epitaxial Deposition ◽  
Argon Ion Bombardment ◽  
Argon Ion

Influence of argon ion bombardment on the oxidation of nickel surfaces

1996 ◽  
Vol 369 (1-3) ◽  
pp. 217-230 ◽  
Author(s):  
Juan Carlos de Jesús ◽  
Pedro Pereira ◽  
José Carrazza ◽  
Francisco Zaera
Keyword(s):  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion

scholarly journals Effect of argon ion bombardment on amorphous silicon carbonitride films

2014 ◽  
Vol 480 ◽  
pp. 012021
Author(s):  
R G S Batocki ◽  
R P Mota ◽  
R Y Honda ◽  
D C R Santos
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Silicon Carbonitride ◽  
Argon Ion Bombardment ◽  
Argon Ion
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