Oxygen‐ and carbon‐related defects in edge‐defined film‐fed growth silicon ribbon

1988 ◽  
Vol 64 (4) ◽  
pp. 2208-2210 ◽  
Author(s):  
B. Pivac ◽  
U. V. Desnica
Keyword(s):  
Silicon Ribbon

scholarly journals PERC Solar Cells on below 100μM Thick Silicon Ribbon Wafers

2013 ◽  
Vol 38 ◽  
pp. 576-581 ◽  
Author(s):  
Philipp Keller ◽  
Fabrice De Moro ◽  
Sven Seren ◽  
Giso Hahn
Keyword(s):  
Solar Cells ◽  
Silicon Ribbon

SEM Characterization of Silicon Layers Grown on Carbon Foil

2009 ◽  
Vol 156-158 ◽  
pp. 473-476 ◽  
Author(s):  
Sergei K. Brantov ◽  
A.V. Eltzov ◽  
Olga V. Feklisova ◽  
Eugene B. Yakimov
Keyword(s):  
Dislocation Density ◽  
Defect Structure ◽  
Growth Direction ◽  
Carbon Foil ◽  
Twin Boundaries ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Silicon Ribbon ◽  
Selective Chemical

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cell Performance ◽  
Silicon Ribbon ◽  
P Type

Increasing Cell Efficiency of S-Web Silicon Ribbon Material Using Synthetic Silica Crucibles

1991 ◽  
pp. 515-518 ◽  
Author(s):  
R. Falckenberg ◽  
J. G. Grabmaier ◽  
A. Lerchenberger ◽  
R. Schindler
Keyword(s):  
Cell Efficiency ◽  
Silicon Ribbon

Silicon ribbon growth via the ribbon-to-ribbon (RTR) technique: Process update and material characterization

1978 ◽  
Vol 7 (3) ◽  
pp. 441-477 ◽  
Author(s):  
R. W. Gurtler ◽  
A. Baghdadi ◽  
R. J. Ellis ◽  
I. A. Lesk
Keyword(s):  
Material Characterization ◽  
Silicon Ribbon ◽  
Ribbon Growth

Viscoplastic Buckling of Silicon Ribbon

1987 ◽  
Vol 54 (3) ◽  
pp. 563-570 ◽  
Author(s):  
C. T. Tsai ◽  
O. W. Dillon
Keyword(s):  
Residual Stresses ◽  
Response Function ◽  
Growth Direction ◽  
Viscoplastic Material ◽  
Material Response ◽  
Lateral Deflection ◽  
Buckling Behavior ◽  
Silicon Ribbon ◽  
Creep Buckling

Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which cause buckling. Based on a viscoplastic material response function (Haasen-Sumino model), the creep buckling behavior of the silicon ribbon is investigated. The lateral deflection speeds describing the viscoplastic buckling behavior are calculated. It is found that the deflections of some modes increase with time while others die out. The role of the residual stresses in viscoplastic buckling is examined.

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