SEM Characterization of Silicon Layers Grown on Carbon Foil

2009 ◽  
Vol 156-158 ◽  
pp. 473-476 ◽  
Author(s):  
Sergei K. Brantov ◽  
A.V. Eltzov ◽  
Olga V. Feklisova ◽  
Eugene B. Yakimov
Keyword(s):  
Dislocation Density ◽  
Defect Structure ◽  
Growth Direction ◽  
Carbon Foil ◽  
Twin Boundaries ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Silicon Ribbon ◽  
Selective Chemical

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Characterization of edge dislocation density through X-ray diffraction rocking curves

2020 ◽  
Vol 551 ◽  
pp. 125893
Author(s):  
Yangfeng Li ◽  
Shen Yan ◽  
Xiaotao Hu ◽  
Yimeng Song ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Edge Dislocation ◽  
X Ray Diffraction ◽  
X Ray

GROWTH AND SPECTROSCOPIC CHARACTERIZATION OF Mg:Ce:Cu:LiNbO3 CRYSTALS

2008 ◽  
Vol 22 (15) ◽  
pp. 1487-1495 ◽  
Author(s):  
YEXIA FAN ◽  
HONGTAO LI ◽  
LIANCHENG ZHAO
Keyword(s):  
Mass Spectrometry ◽  
Defect Structure ◽  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Spectroscopic Characterization ◽  
Threshold Concentration ◽  
Ir Absorption ◽  
X Ray ◽  
Inductively Coupled

Congruent Ce (0.1 wt %): Cu (0.05 wt %): LiNbO 3 single crystals doped with 0, 1, 3, 4, 5, 6 mol% MgO respectively were grown by the Czochrolski method in air along the C direction. The inductively coupled plasma optical emission/mass spectrometry (ICP-OE/MS), the X-ray powder diffraction (XRD), the differential thermal analysis (DTA), the ultraviolet-visible (UV-Vis) absorption spectra and the infrared (IR) absorption spectrum were measured and discussed in terms of the spectroscopic characterization and the defect structure of the Mg:Ce:Cu:LiNbO 3 crystals. The results indicated that the Mg:Ce:Cu:LiNbO 3 crystal grown from the congruent composition melt showed large [ Li ]/[ Nb ] ratios, which was closer to stoichiometry, an increase in the Curie temperature and a non-linear shift in the absorption edge with MgO concentration increasing. The threshold concentration of MgO in Mg:Ce:Cu:LiNbO 3 of nearly 5.52 mol% was estimated.

Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them

2002 ◽  
Vol 742 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Jie Bai ◽  
William M. Vetter ◽  
Perena Gouma ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Screw Dislocation ◽  
Pore Morphology ◽  
Porous Substrate ◽  
X Ray ◽  
Porous Sic ◽  
Screw Dislocation Density

ABSTRACTPorous 6H-SiC and 4H-SiC wafers formed by anodization have been characterized in this study prior to and following the CVD deposition of SiC epitaxial layers, using a combination of synchrotron white beam x-ray topography (SWBXT), SEM, TEM and optical microscopy. Under the high temperatures employed during epitaxial growth, a significant change in pore morphology occurs. While no evidence of reduced screw dislocation density in the epilayers is obtained, a small tilt of the epilayers with respect to the porous substrate observed on x-ray topographs could play a role in limiting penetration of defects from the substrate.

Microstructural Characterization of GaAs Substrates

1986 ◽  
Vol 69 ◽  
Author(s):  
T. M. Moore ◽  
S. Matteso ◽  
W. M. Duncan ◽  
R. J. Matyi
Keyword(s):  
Defect Structure ◽  
Microstructural Characterization ◽  
Acoustic Microscopy ◽  
Double Crystal ◽  
X Ray ◽  
Major Transitions ◽  
Gaas Substrates ◽  
Defect Microstructures ◽  
Electron Acoustic

AbstractThe defect microstructures of GaAs substrates have been investigated in a multi-technique approach including integral cathodoluminescence (CL), scanning electron acoustic microscopy (SEAM), double crystal x-ray topography (XRT), and defect delineation etch. The XRT, CL, and SEAM studies are of identical areas on <100> SI GaAs(Cr) grown by the liquid encapsulated Czochralski (LEC) method and by the horizontal Bridgman (HB) method. Correlation was made to the defect structure revealed by defect delineation etching. The samples were also characterized by Fourier transform photoluminescence (FTPL) to qualitatively identify the major transitions contributing to the CL images. The CL, SEAM, XRT, and defect delineation etch images of each material are compared and their different perspectives are discussed.

scholarly journals Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

2017 ◽  
Vol 24 (5) ◽  
pp. 981-990 ◽  
Author(s):  
Arman Davtyan ◽  
Sebastian Lehmann ◽  
Dominik Kriegner ◽  
Reza R. Zamani ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Bragg Peak ◽  
Stacking Faults ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterson Function ◽  
Transmission Electron ◽  
Gaas Nanowires ◽  
Gaas Nanowire

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

An expert system for the structural characterization of kaolinites

Clay Minerals ◽  
1990 ◽  
Vol 25 (3) ◽  
pp. 249-260 ◽  
Author(s):  
A. Plançon ◽  
C. Zacharie
Keyword(s):  
Expert System ◽  
Defect Structure ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Diffraction Profile ◽  
X Ray ◽  
Diffraction Patterns ◽  
Xrd Patterns

AbstractUntil recently, the determination of the defect structures (previously referred to incorrectly as “crystallinity”) of kaolinites has been obtained in one of two ways: (1) measurement of the Hinckley index, or (2) by comparing calculated X-ray diffraction patterns based on a model of the defect structure (including types of defects and abundances) with experimental diffraction profiles. The Hinckley method is simple and easy to perform but contains no real information about the defect structure. Calculated XRD patterns are based on real defects but these calculations are time consuming and require some skill in application. Another approach is proposed: an expert system which will accurately describe the defect structure of kaolinites based on a few measurements taken from a normal powder diffraction profile. This system has been verified for nine kaolinite samples for which the defect structure was previously determined by comparison of calculated and observed diffraction profiles. The expert system reproduced the correct defect structure for each of the samples.

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

2010 ◽  
Vol 645-648 ◽  
pp. 291-294 ◽  
Author(s):  
Michael Dudley ◽  
Ning Zhang ◽  
Yu Zhang ◽  
Balaji Raghothamachar ◽  
Sha Yan Byrapa ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Dislocation Density ◽  
Basal Plane ◽  
X Ray ◽  
Repetitive Process ◽  
Basal Plane Dislocation ◽  
And Behavior ◽  
New Generation ◽  
Edge Dislocations

Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 102 cm-2). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

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