Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates

2010 ◽  
Vol 97 (8) ◽  
pp. 081111 ◽  
Author(s):  
Shinji Koh ◽  
Akira Nakanishi ◽  
Hitoshi Kawaguchi
2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm-3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs


2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  

2014 ◽  
Vol 116 (2) ◽  
pp. 023507 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yusuke Yasuda ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi

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