Pump Probe Measurement of Electron Spin Relaxation Time in (110)-Oriented GaAs/AlGaAs Multiple Quantum Well Microposts

2012 ◽  
Vol 5 (12) ◽  
pp. 122401 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yoshihiro Tsunemi ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm-3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs


2010 ◽  
Vol 22 (22) ◽  
pp. 1689-1691 ◽  
Author(s):  
Nobuhide Yokota ◽  
Kazuhiro Ikeda ◽  
Yoshitaka Nishizaki ◽  
Shinji Koh ◽  
Hitoshi Kawaguchi

2014 ◽  
Vol 116 (2) ◽  
pp. 023507 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yusuke Yasuda ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi

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