Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

2010 ◽  
Vol 97 (20) ◽  
pp. 202102 ◽  
Author(s):  
Satoshi Iba ◽  
Shinji Koh ◽  
Hitoshi Kawaguchi
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation

Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells

2014 ◽  
Vol 116 (2) ◽  
pp. 023507 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yusuke Yasuda ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation

Electron Spin Relaxation in Semiconductor Quantum Wells

2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Spin Relaxation Time ◽  
Multiple Quantum ◽  
Pump Probe ◽  
Electron Spin Relaxation

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm－3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs

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