scholarly journals Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

2018 ◽  
Vol 33 (11) ◽  
pp. 114013 ◽  
Author(s):  
S Azaizia ◽  
A Balocchi ◽  
S Mazzucato ◽  
F Cadiz ◽  
F Beato de le Salle ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation ◽  
Quantum Well Structures ◽  
Bismuth Content

Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

2010 ◽  
Vol 22 (22) ◽  
pp. 1689-1691 ◽  
Author(s):  
Nobuhide Yokota ◽  
Kazuhiro Ikeda ◽  
Yoshitaka Nishizaki ◽  
Shinji Koh ◽  
Hitoshi Kawaguchi
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Lifetime ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation

Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells

2014 ◽  
Vol 116 (2) ◽  
pp. 023507 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yusuke Yasuda ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation
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