A generalized view of the correlation factor in solid‐state diffusion

1994 ◽  
Vol 75 (6) ◽  
pp. 2851-2856 ◽  
Author(s):  
Sheikh A. Akbar
Keyword(s):  
Solid State ◽  
Correlation Factor ◽  
Solid State Diffusion ◽  
State Diffusion

Segmented Random Walks and Correlation Factors in Solid State Diffusion

1975 ◽  
Vol 53 (11) ◽  
pp. 1054-1059 ◽  
Author(s):  
G. V. Kidson
Keyword(s):  
Diffusion Coefficient ◽  
Solid State ◽  
Random Walks ◽  
Correlation Factor ◽  
Typical Case ◽  
Independent Parameter ◽  
Solid State Diffusion ◽  
Vacancy Mechanism ◽  
State Diffusion ◽  
Correlation Factors

Hart's discussion of the measured diffusion coefficient D, for systems in which atom transport occurs via both the vacancy mechanism and along dislocation pipes, has been generalized to include any number of contributing mechanisms. The treatment introduces the concept of uncorrelated segments and shows that the correlation factor associated with each contributing mechanism contains a time independent parameter [Formula: see text] associated with the average number of jumps per segment. The analysis shows that the usual expression for the correlation factors obtained by assuming [Formula: see text] can be corrected for finite values of [Formula: see text]. The error involved in a typical case is less than 1% if [Formula: see text].

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Investigation of the diffusion behavior in Sn-xAg-yCu/Cu solid state diffusion couples

2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans
Keyword(s):  
Solid State ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
Diffusion Behavior ◽  
State Diffusion
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