Effect of alloy scattering on the longitudinal hot electron drift velocity inn‐Hg0.8Cd0.2Te in the extreme‐quantum‐limit magnetic fields at low temperatures

1994 ◽  
Vol 75 (2) ◽  
pp. 1231-1233 ◽  
Author(s):  
Pallab Banerji ◽  
C. K. Sarkar
Keyword(s):  
Magnetic Fields ◽  
Drift Velocity ◽  
Low Temperatures ◽  
Electron Drift Velocity ◽  
Quantum Limit ◽  
Electron Drift ◽  
Hot Electron ◽  
Alloy Scattering

Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

2012 ◽  
Vol 27 (12) ◽  
pp. 122001 ◽  
Author(s):  
L Ardaravičius ◽  
O Kiprijanovič ◽  
J Liberis ◽  
A Matulionis ◽  
X Li ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Hot Electron

Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions

1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 924-928 ◽  
Author(s):  
Jean Lasserre ◽  
Hiroyoshi Tanimoto ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Hot Electron

Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

2010 ◽  
Vol 5 (2) ◽  
pp. 65-67 ◽  
Author(s):  
L. Ardaravicˇius ◽  
J. Liberis ◽  
O. Kiprijanovicˇ ◽  
A. Matulionis ◽  
M. Wu ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Hot Electron

MONTE CARLO MODELING OF HOT ELECTRON TRANSPORT IN BULK AlAs, AlGaAs AND GaAs AT ROOM TEMPERATURE

2008 ◽  
Vol 22 (18) ◽  
pp. 1777-1784 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. R. KHALVATI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Critical Field ◽  
Electron Drift Velocity ◽  
Electron Velocity ◽  
Electron Drift ◽  
Hot Electron ◽  
Velocity Overshoot ◽  
Transient Velocity ◽  
Hot Electron Transport

The results of an ensemble Monte Carlo simulation of electron drift velocity response on the application field in bulk AlAs , AlGaAs and GaAs are presented. All dominant scattering mechanisms in the structure considered have been taken into account. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of ~105 ms-1 within 4 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

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