The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

2011 ◽  
Vol 98 (12) ◽  
pp. 121115 ◽  
Author(s):  
Yi-Keng Fu ◽  
Ren-Hao Jiang ◽  
Yu-Hsuan Lu ◽  
Bo-Chun Chen ◽  
Rong Xuan ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Light Emitting Diodes ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 5 (12) ◽  
pp. 122101 ◽  
Author(s):  
Toru Kinoshita ◽  
Keiichiro Hironaka ◽  
Toshiyuki Obata ◽  
Toru Nagashima ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

2004 ◽  
Vol 95 (12) ◽  
pp. 8247-8251 ◽  
Author(s):  
G. A. Smith ◽  
T. N. Dang ◽  
T. R. Nelson ◽  
J. L. Brown ◽  
D. Tsvetkov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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