An approximate formula for the relaxation time of a single domain ferromagnetic particle with uniaxial anisotropy and collinear field

1994 ◽  
Vol 76 (8) ◽  
pp. 4900-4902 ◽  
Author(s):  
P. J. Cregg ◽  
D. S. F. Crothers ◽  
A. W. Wickstead
Keyword(s):  
Relaxation Time ◽  
Approximate Formula ◽  
Uniaxial Anisotropy ◽  
Single Domain ◽  
Ferromagnetic Particle

Dynamic magnetic hysteresis in single-domain particles with uniaxial anisotropy

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
I. S. Poperechny ◽  
Yu. L. Raikher ◽  
V. I. Stepanov
Keyword(s):  
Magnetic Hysteresis ◽  
Uniaxial Anisotropy ◽  
Single Domain

scholarly journals Формирование наноразмерных ферромагнитных филаментов Ni в пленках ZrO-=SUB=-2-=/SUB=-(Y)

2021 ◽  
Vol 47 (11) ◽  
pp. 30
Author(s):  
Д.А. Антонов ◽  
А.С. Новиков ◽  
Д.О. Филатов ◽  
А.В. Круглов ◽  
И.Н. Антонов ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Resistive Switching ◽  
Magnetic Force ◽  
Single Domain ◽  
Ferromagnetic Particle ◽  
Conducting Filament ◽  
Atomic Force ◽  
Bipolar Type ◽  
Afm Probe

In thin ZrO2 (Y) / Ni films, with used of an atomic force microscope (AFM) probe, conductive ferromagnetic filaments of nanometer sizes, consisting of Ni atoms, are formed. Memristor structures based on such films, the upper electrode of which was the AFM probe, demonstrated bipolar-type resistive switching (RP) associated with the destruction and reduction of Ni filaments. The area where the conducting filament emerges on the surface of the ZrO2 (Y) film manifested itself in the magnetic force image as a single-domain ferromagnetic particle.

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