Peculiarities of the memory state formation in thin Ge2Sb2Te5 films

The current-voltage characteristics of Ge2Sb2Te5 thin films were measured by a sequence of triangular current pulses with an increasing maximum current. Each current pulse forms in the sample a conducting filament with an area proportional to the maximum current in the recording pulse.

Modelling and Evolution of Conducting Filament in TiOx Memristor Using Conducting Atomic Force Microscopy

Conducting filament evolution in TiOx based resistive switching memory fabricated by simple oxidation of Ti film is investigated. Formation of titanium oxide is confirmed from the X-ray diffraction study. Forming is required to initiate the switching process. A bipolar analog switching is observed with a positive set and negative reset voltage. The switching properties in TiOx layer owing to the formation of conducting filament is confirmed from the conducting atomic force micrograph at different bias voltage. A significant change in surface topography as a filament formation during set and reset is presented. Conduction mechanism inside the device at various voltage and effect of tunnel width on current is studied. The effective tunnel width of conduction filament and related parameters for device using device modelling (Threshold Adaptive Memristor model) is studied. The device can be used for synaptic applications.

Формирование наноразмерных ферромагнитных филаментов Ni в пленках ZrO-=SUB=-2-=/SUB=-(Y)

In thin ZrO2 (Y) / Ni films, with used of an atomic force microscope (AFM) probe, conductive ferromagnetic filaments of nanometer sizes, consisting of Ni atoms, are formed. Memristor structures based on such films, the upper electrode of which was the AFM probe, demonstrated bipolar-type resistive switching (RP) associated with the destruction and reduction of Ni filaments. The area where the conducting filament emerges on the surface of the ZrO2 (Y) film manifested itself in the magnetic force image as a single-domain ferromagnetic particle.

INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS

In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered

INVESTIGATION OF THERMAL EFFECTS IN HFO2 RRAM STRUCTURES DURING THE RESET PROCESS

In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered.