Dark current‐voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes

1995 ◽  
Vol 78 (5) ◽  
pp. 3481-3487 ◽  
Author(s):  
R. Martins ◽  
E. Fortunato
Keyword(s):  
Amorphous Silicon ◽  
Dark Current ◽  
Hydrogenated Amorphous Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous

Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading

1999 ◽  
Vol 557 ◽  
Author(s):  
E. Schroten ◽  
M. Zeman ◽  
R. A. C. M. M. van Swaaij ◽  
L. L. A. Vosteen ◽  
J. W. Metselaar
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Model Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Amorphous Silicon Germanium ◽  
Parameter Values ◽  
Hydrogenated Amorphous

AbstractComputer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.

Capacitance Spectroscopy of Defects in a-SI:H/c-SI Heterostructures

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Rösch ◽  
T. Unold ◽  
R. Pointmayer ◽  
G.H. Bauer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Clear Correlation ◽  
Temperature Dependent ◽  
Capacitance Measurements ◽  
Interface Defects ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Capacitance Spectroscopy ◽  
Hydrogenated Amorphous

AbstractWe investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.

Dark current of hydrogenated amorphous silicon photo-diode

1985 ◽  
Vol 77-78 ◽  
pp. 1417-1420 ◽  
Author(s):  
Hidejiro Miki ◽  
Masahiro Hayama ◽  
Kazuhiro Kobayashi ◽  
Naoki Nakagawa ◽  
Makoto Otani ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Dark Current ◽  
Hydrogenated Amorphous Silicon ◽  
Photo Diode ◽  
Hydrogenated Amorphous

PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Bohm
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Dark Current ◽  
Reverse Bias ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Current Noise ◽  
Pin Diodes ◽  
Hydrogenated Amorphous ◽  
Operating Points

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

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