PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Bohm
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Dark Current ◽  
Reverse Bias ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Current Noise ◽  
Pin Diodes ◽  
Hydrogenated Amorphous ◽  
Operating Points

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes

2003 ◽  
Vol 762 ◽  
Author(s):  
Todd R. Johnson ◽  
Gautam Ganguly ◽  
George S. Wood ◽  
David E. Carlson
Keyword(s):  
Zinc Oxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Tin Oxide ◽  
Reverse Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Cell Area ◽  
Leakage Currents ◽  
Single Junction ◽  
Hydrogenated Amorphous

AbstractExcess leakage currents under reverse bias (known as shunting) and spontaneous reductions of this excess leakage under increased reverse bias (known as curing) were investigated in hydrogenated amorphous silicon (a-Si:H) based single junction p-i-n type diodes. An increase in the frequency of shunting was observed when the front contacts were switched from tin oxide to zinc oxide, most likely due to defects in the previously deposited zinc oxide coated glass was observed. Storage in the dark and light soaking up to 100 hours were both observed to independently increase the leakage current in previously leaking diodes. Models for the distribution of shunt-causing defects within a given cell area were considered. Comparing the measured frequency of shunting using cells of varying area (1 to 16 mm2) to the models' predictions indicate a distribution of point defects separated by relatively large average distances that are slightly larger for tin oxide (5-6 mm) than for zinc oxide (4 mm).

Hydrogenated amorphous silicon pin diodes with high rectification ratio

1983 ◽  
Vol 59-60 ◽  
pp. 1179-1182 ◽  
Author(s):  
Kouichi Seki ◽  
Hideaki Yamamoto ◽  
Akira Sasano ◽  
Toshihisa Tsukada
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rectification Ratio ◽  
Pin Diodes ◽  
Hydrogenated Amorphous

Dark current of hydrogenated amorphous silicon photo-diode

1985 ◽  
Vol 77-78 ◽  
pp. 1417-1420 ◽  
Author(s):  
Hidejiro Miki ◽  
Masahiro Hayama ◽  
Kazuhiro Kobayashi ◽  
Naoki Nakagawa ◽  
Makoto Otani ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Dark Current ◽  
Hydrogenated Amorphous Silicon ◽  
Photo Diode ◽  
Hydrogenated Amorphous

Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

1997 ◽  
Vol 467 ◽  
Author(s):  
Indra Nurdjaja ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Voltage Dependence ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Schottky Barrier Diodes ◽  
Dispersion Effect ◽  
Hydrogenated Amorphous

ABSTRACTWe present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

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