Radiative recombination and photon recycling in gallium arsenide solar cells

1992 ◽  
Author(s):  
M. S. Lundstrom ◽  
M. R. Melloch ◽  
G. B. Lush ◽  
M. P. Patkar ◽  
M. Young ◽  
...  
Author(s):  
James P. Connolly

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Waseem Raja ◽  
Michele De Bastiani ◽  
Thomas G. Allen ◽  
Erkan Aydin ◽  
Arsalan Razzaq ◽  
...  

Abstract Metal halide perovskites have emerged in recent years as promising photovoltaic materials due to their excellent optical and electrical properties, enabling perovskite solar cells (PSCs) with certified power conversion efficiencies (PCEs) greater than 25%. Provided radiative recombination is the dominant recombination mechanism, photon recycling – the process of reabsorption (and re-emission) of photons that result from radiative recombination – can be utilized to further enhance the PCE toward the Shockley–Queisser (S-Q) theoretical limit. Geometrical optics can be exploited for the intentional trapping of such re-emitted photons within the device, to enhance the PCE. However, this scheme reaches its fundamental diffraction limits at the submicron scale. Therefore, introducing photonic nanostructures offer attractive solutions to manipulate and trap light at the nanoscale via light coupling into guided modes, as well as localized surface plasmon and surface plasmon polariton modes. This review focuses on light-trapping schemes for efficient photon recycling in PSCs. First, we summarize the working principles of photon recycling, which is followed by a review of essential requirements to make this process efficient. We then survey photon recycling in state-of-the-art PSCs and propose design strategies to invoke light-trapping to effectively exploit photon recycling in PSCs. Finally, we formulate a future outlook and discuss new research directions in the context of photon recycling.


2014 ◽  
pp. 1195-1212
Author(s):  
James P. Connolly

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.


Author(s):  
Masafumi YAMAGUCHI ◽  
HITOSHI TAMPO ◽  
Hajime SHIBATA ◽  
Kan-hua Lee ◽  
Kenji ARAKI ◽  
...  

2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters

2020 ◽  
Author(s):  
Masafumi Yamaguchi

The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Especially, GaAs solar cells have shown 29.1% under 1-sun, highest ever reported for single-junction solar cells. In addition, analytical results for non-radiative recombination and resistance losses in III-V compound solar cells are shown by considering fundamentals for major losses in III-V compound materials and solar cells. Because the limiting efficiency of single-junction solar cells is 30-32%, multi-junction junction solar cells have been developed and InGaP/GaAs based 3-junction solar cells are widely used in space. Recently, highest efficiencies of 39.1% under 1-sun and 47.2% under concentration have been demonstrated with 6-junction solar cells. This chapter also reviews progress in III-V compound multi-junction solar cells and key issues for realizing high-efficiency multi-junction cells.


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