Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

2012 ◽  
Vol 111 (10) ◽  
pp. 103518 ◽  
Author(s):  
S. F. Chichibu ◽  
K. Hazu ◽  
Y. Ishikawa ◽  
M. Tashiro ◽  
H. Namita ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Time Resolved ◽  
Growth Studies ◽  
Gan Heterostructure ◽  
Time Resolved Photoluminescence

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy

2013 ◽  
Vol 50 (42) ◽  
pp. 1-8 ◽  
Author(s):  
S. F. Chichibu ◽  
Y. Ishikawa ◽  
M. Tashiro ◽  
K. Hazu ◽  
K. Furusawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Time Resolved

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

2000 ◽  
Vol 76 (22) ◽  
pp. 3224-3226 ◽  
Author(s):  
H. Y. Huang ◽  
C. K. Shu ◽  
W. C. Lin ◽  
C. H. Chuang ◽  
M. C. Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

scholarly journals Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN

2001 ◽  
Vol 6 ◽  
Author(s):  
E.M. Goldys ◽  
M. Godlewski ◽  
T. Paskova ◽  
G. Pozina ◽  
B. Monemar
Keyword(s):  
Vapor Phase ◽  
Electron Beam Irradiation ◽  
Hydride Vapor Phase Epitaxy ◽  
Time Resolved ◽  
Red Emission ◽  
Emission Signal ◽  
Cathodoluminescence Spectroscopy ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

Structural Characterization of Thick Gan Films Grown by Hydride Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
L. T. Romano ◽  
R. J. Molnar ◽  
B. S. Krusor ◽  
G. A. Anderson ◽  
D. P. Bour ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Zno Buffer Layer ◽  
Dislocation Annihilation

AbstractThe structural quality of GaN films grown by hydride vapor phase epitaxy (HVPE) was characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and atomic force microscopy (AFM). Films were grown up to 40μm on sapphire with either a GaC1 pretreatment prior to growth or on a ZnO buffer layer. Dislocation densities were found to decrease with increasing film thickness. This is attributed to the mixed nature of the defects present in the film which enabled dislocation annihilation. The thickest film had a defect density of 5×107 dislocations/cm2.

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