Spatial distribution of neutral oxygen vacancies on ZnO nanowire surfaces: An investigation combining confocal microscopy and first principles calculations

2013 ◽  
Vol 114 (3) ◽  
pp. 034901 ◽  
Author(s):  
Kin Mun Wong ◽  
S. M. Alay-e-Abbas ◽  
Yaoguo Fang ◽  
A. Shaukat ◽  
Yong Lei
2019 ◽  
Vol 150 (4) ◽  
pp. 044702 ◽  
Author(s):  
Jack Strand ◽  
Sergey K. Chulkov ◽  
Matthew B. Watkins ◽  
Alexander L. Shluger

2009 ◽  
Vol 11 (27) ◽  
pp. 5550 ◽  
Author(s):  
Akihide Kuwabara ◽  
Reidar Haugsrud ◽  
Svein Stølen ◽  
Truls Norby

2016 ◽  
Vol 120 (23) ◽  
pp. 233105 ◽  
Author(s):  
Faisal Mehmood ◽  
Ruth Pachter ◽  
Neil R. Murphy ◽  
Walter E. Johnson ◽  
Chintalapalle V. Ramana

2021 ◽  
Vol 23 (36) ◽  
pp. 20444-20452
Author(s):  
Lihong Zhang ◽  
Shunqing Wu ◽  
Jianwei Shuai ◽  
Zhufeng Hou ◽  
Zizhong Zhu

The oxygen vacancy (left panel) and the vacancy formation energy as a function of temperature and pressure (right panel).


2014 ◽  
Vol 16 (22) ◽  
pp. 10719-10726 ◽  
Author(s):  
Summayya Kouser ◽  
Umesh V. Waghmare ◽  
Nacir Tit

Based on first-principles calculations, we report novel applications of an inorganic analogue of graphene (2D-ZnO) in the detection and capture of toxic H2S gas, its dissociation and conversion to a green fuel, hydrogen, highlighting the role of N-substitution and oxygen vacancies.


2009 ◽  
Vol 95 (26) ◽  
pp. 262111 ◽  
Author(s):  
Abdul K. Rumaiz ◽  
J. C. Woicik ◽  
E. Cockayne ◽  
H. Y. Lin ◽  
G. Hassnain Jaffari ◽  
...  

2020 ◽  
Vol 8 (9) ◽  
pp. 4784-4789 ◽  
Author(s):  
Yonghun Shin ◽  
Kyung-Yeon Doh ◽  
Seong Hun Kim ◽  
June Ho Lee ◽  
Hohan Bae ◽  
...  

Metal to semiconductor transition by hole compensation of excess electrons from VO and localized VO state in La0.5Sr0.5FeO3−δ under low PO2.


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