Effects of deposition temperature on structure and properties of (K0.48Na0.52)NbO3 ferroelectric thin films by pulsed laser deposition

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-655-cc3.5.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 1

Author(s):

Masanori Okuyama ◽

Toshiyuki Nakaiso ◽

Minoru Noda

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Polarization Reversal ◽

Ambient Gas ◽

Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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Pulsed laser deposition of perovskite relaxor ferroelectric thin films

Applied Surface Science ◽

10.1016/j.apsusc.2005.07.140 ◽

2006 ◽

Vol 252 (13) ◽

pp. 4553-4557 ◽

Cited By ~ 23

Author(s):

N. Scarisoreanu ◽

M. Dinescu ◽

F. Craciun ◽

P. Verardi ◽

A. Moldovan ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Relaxor Ferroelectric ◽

Ferroelectric Thin Films ◽

Laser Deposition

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Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

Applied Surface Science ◽

10.1016/j.apsusc.2011.10.116 ◽

2012 ◽

Vol 258 (7) ◽

pp. 2674-2678 ◽

Cited By ~ 29

Author(s):

Aifen Tian ◽

Wei Ren ◽

Lingyan Wang ◽

Peng Shi ◽

Xiaofeng Chen ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Pulsed Laser ◽

Laser Deposition

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Effect of Deposition Temperature on the Epitaxial Growth of YBCO Thin Films on RABiTS Substrates by Pulsed Laser Deposition Method

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2010.2040475 ◽

2010 ◽

Vol 20 (3) ◽

pp. 1553-1556 ◽

Cited By ~ 8

Author(s):

Linfei Liu ◽

Zuncheng Zhao ◽

Huaran Liu ◽

Yijie Li

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Deposition Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Method ◽

Ybco Thin Films

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The ferroelectric thin films of SrBi2Ta2O9 prepared using pulsed laser deposition

Chinese Science Bulletin ◽

10.1007/bf03182631 ◽

1997 ◽

Vol 42 (7) ◽

pp. 612-614 ◽

Cited By ~ 1

Author(s):

Pingxiong Yang ◽

Lirong Zheng ◽

Chenglu Lin

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition

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Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-472-373 ◽

1997 ◽

Vol 472 ◽

Cited By ~ 4

Author(s):

M.A. El Khakani ◽

M. Chaker

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Room Temperature ◽

Optical Transmission ◽

Ambient Pressure ◽

Pulsed Laser ◽

Laser Deposition ◽

Structure Morphology ◽

Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

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