Polarized Raman scattering analysis of Cu2ZnSnSe4 and Cu2ZnGeSe4 single crystals

2013 ◽  
Vol 114 (19) ◽  
pp. 193514 ◽  
Author(s):  
M. Guc ◽  
S. Levcenko ◽  
V. Izquierdo-Roca ◽  
X. Fontané ◽  
E. Arushanov ◽  
...  
2003 ◽  
Vol 82 (18) ◽  
pp. 2972-2974 ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Hisao Kanda ◽  
Elena M. Shishonok

2001 ◽  
Vol 64 (14) ◽  
Author(s):  
J. Hlinka ◽  
I. Gregora ◽  
J. Pokorný ◽  
A. Plecenik ◽  
P. Kúš ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
Spirit Tlali ◽  
Howard E. Jackson ◽  
M. C. Ohmer ◽  
P. G. Schunemann ◽  
T. M. Pollak

AbstractRaman scattering experiments on high quality ZnGeP2 single crystals grown by the seeded horizontal dynamic gradient technique have been carried out. Polarized Raman spectra were obtained in the backscattering geometry at both room and low temperatures for several crystal orientations and compared with group theoretical predictions. Raman spectra from as-grown and annealed samples display distinctive differences which were explored by utilizing two different excitation wavelengths: 514.3 nm and 632.8 nm; the observed differences are attributed to a surface interdiffuasion effect.


Pramana ◽  
2002 ◽  
Vol 58 (5-6) ◽  
pp. 1013-1017 ◽  
Author(s):  
M Pattabiraman ◽  
G Rangarajan ◽  
Kwang-Yong Choi ◽  
P Lemmens ◽  
G Guentherodt ◽  
...  

2015 ◽  
Vol 05 (02) ◽  
pp. 1550013 ◽  
Author(s):  
J. Pokorný ◽  
I. Rafalovskyi ◽  
I. Gregora ◽  
F. Borodavka ◽  
M. Savinov ◽  
...  

This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0.5 Nb 0.5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.


1987 ◽  
Vol 99 ◽  
Author(s):  
D. M. Krol ◽  
M. Stavola ◽  
L. F. Schneemeyer ◽  
J. V. Waszczak ◽  
W. Weber

ABSTRACTPolarized Raman spectra have been measured on single crystals of the high Tc materials A2BCu3Ox with A=Ba and Sr, B=Y and La and 6<x<7. The dependence of the 500 cm-i peak position (αzz)on chemical composition is in agreement with its assignment to the O(1) axial stretching vibration. The intensity of the 600 cm1 band, which has been ascribed to a defect induced Cu-O mode, strongly depends on the crystal preparation and resulting purity.


1973 ◽  
Vol 27 (5) ◽  
pp. 382-385 ◽  
Author(s):  
Basil I. Swanson

A completely general notation for polarized Raman scattering from gases, solutions, liquids, and single crystals is presented. This notation can be used to describe scattering from single crystals where more general crystallographic directions are employed. Scattering experiments where nonpolarized incident light is used, or where both polarization components of scattered light are observed, can also be labeled. Single crystal scattering efficiencies are discussed in terms of the generalized notation.


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