Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film

It is challenging to obtain wafer-scaled aligned films for completely exploiting the promising properties of semiconducting single-walled carbon nanotubes (s-SWCNTs). Aligned s-SWCNTs with a large area can be obtained by combining water evaporation and slow withdrawal-induced self-assembly in a dip-coating process. Moreover, the tunability of deposition morphology parameters such as stripe width and spacing is examined. The polarized Raman results show that s-SWCNTs can be aligned in ±8.6°. The derived two terminal photodetector shows both a high negative responsivity of 41 A/W at 520 nm and high polarization sensitivity. Our results indicate that aligned films with a large area may be useful to electronics- and optoelectronics-related applications.

Anomalous Polarization Pattern Evolution of Raman Modes in Few-layer ReS2 by Angle-resolved Polarized Raman Spectroscopy

Low-symmetry of ReS2 has not only in-plane but also out-of-plane anisotropic light scattering, which is complicated, yet interesting with intrinsic strong electron-phonon coupling. In such case, the Raman tensor also...

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

Raman scattering and luminescence in single crystals of the amino acid glycine C2H5NO2 with an admixture of croconic acid C5H2O5

Single crystals of the amino acid glycine (Gly) C2H5NO2 doped with croconic acid (CA) C5H2O5 were synthesized by evaporation from an aqueous solution. The crystals grow in the form of hexagonal pyramids or thin plates. Analysis of polarized Raman scattering spectra (excitation wavelength of 532 nm) measured at room temperatures showed that crystals in the form of pyramids corresponded to γ-polymorph (γ-Gly), and crystals in the form of plates to α-polymorph of glycine (α - Gly). The presence of croconic acid molecules in the crystals is confirmed by the change in their color from white in pure Gly crystals to light or dark yellow, characteristic of CA crystals, as well as the presence of weak lines corresponding to CA in the Raman spectra. In single crystals of both Gly:CA polymorphs, strong green luminescence significantly exceeding the intensity of Raman scattering is observed in the range 400 - 700 nm with a maximum at 510 nm (2.44 eV) upon excitation at λ= 325 nm.