Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence
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2017 ◽
Vol 17
(10)
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pp. 1298-1302
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2009 ◽
Vol 15
(4)
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pp. 1104-1114
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