Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination

2014 ◽  
Vol 104 (4) ◽  
pp. 042107 ◽  
Author(s):  
Kay-Michael Guenther ◽  
Thomas Gimpel ◽  
Jens W. Tomm ◽  
Stefan Winter ◽  
Augustinas Ruibys ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Carrier Generation ◽  
Excess Carrier ◽  
Doped Silicon

Effect of the thickness of Si film on Si/Se film doped silicon prepared by femtosecond laser

2017 ◽  
Vol 29 (6) ◽  
pp. 4526-4532 ◽  
Author(s):  
Yuanlin Shi ◽  
Zhiming Wu ◽  
Lingyan Du ◽  
Siyu Li ◽  
Yadong Jiang
Keyword(s):  
Femtosecond Laser ◽  
Doped Silicon

Femtosecond Laser Direct Writing Assisted Nonequilibriumly Doped Silicon n+-p Photodiodes for Light Sensing

2015 ◽  
Vol 15 (8) ◽  
pp. 4259-4263 ◽  
Author(s):  
Ji-Hong Zhao ◽  
Chun-Hao Li ◽  
Qi-Dai Chen ◽  
Hong-Bo Sun
Keyword(s):  
Femtosecond Laser ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Light Sensing ◽  
Doped Silicon

Effect of stress on the carrier generation rate in gold-doped silicon

1970 ◽  
Vol 13 (12) ◽  
pp. 1519-1526 ◽  
Author(s):  
J.L. Prince ◽  
J.J. Wortman ◽  
L.K. Monteith ◽  
J.R. Hauser
Keyword(s):  
Generation Rate ◽  
Carrier Generation ◽  
Doped Silicon

Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation

2004 ◽  
Vol 79 (7) ◽  
pp. 1635-1641 ◽  
Author(s):  
C.H. Crouch ◽  
J.E. Carey ◽  
M. Shen ◽  
E. Mazur ◽  
F.Y. Génin
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Infrared Absorption ◽  
Femtosecond Laser Irradiation ◽  
Doped Silicon

In Situ Measurement of Pulsed Laser Indxuce Carrier Ceneraticn in Doped Silicon Films

1989 ◽  
Vol 158 ◽  
Author(s):  
T. Saveshimn ◽  
M. Hara ◽  
S. Usui
Keyword(s):  
Silicon Film ◽  
Pulsed Laser ◽  
Processing Temperature ◽  
Molten Silicon ◽  
Carrier Generation ◽  
Laser Doping ◽  
Doped Silicon ◽  
Doping Technique ◽  
Dopant Atoms

ABSTRACTTransient conductance measurements were used to study rapid carrier generation during the laser doping of a silicon film. The movement of the liquid-solid interface was measured and the point of initiation of carrier generation frcn dopant atoms diffused to the molten silicon was determined. It was established that the dopant atais are activated at the nmorent the dopant diffused region solidified. Also, the laser doping technique was used to fabricate polycrystalline silicsn thin film transistors (Poly-Si TFT's) ata processing temperature of 250ºC.

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