Influence of QD array positioning in GaAs solar cell p-n junction on their photoelectric characteristics

In the work, the effect of In0.8Ga0.2As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy, in which layers of quantum dots were placed in the middle of the i-region and also have been shifted to the base and the emitter. As a result, it has been shown that the solar cell with a quantum dot array shifted to the base demonstrates the smallest open-circuit voltage drop and, accordingly, a higher efficiency value.

Mixed Dimensional 0D/3D Perovskite Heterostructure for Efficient Green Light Emitting Diodes

Metal halide perovskites are emerging materials for next-generation optoelectronic devices, of which all-inorganic CsPbBr3 perovskite has attracted increasing attention due to outstanding stability and excellent photoelectric characteristics compared with organic-inorganic...

Исследование фотоэлектрических характеристик GaAs-фотопреобразователей при различном расположении массива квантовых точек InGaAs в i-области

The positioning of In0.8Ga0.2As quantum dots (QDs) array in the i-region of the solar cell (SC) on its photogenerated current and the dark saturation currents, which determine the operating voltage of the device, have been investigated. It was found that the indicated photoelectric characteristics depend on the location of the QD array relative to the electric field of the p-n junction. The displacement of the QD array to the boundary of the weakly doped base leads to a decrease in the photogenerated current. But at the same time, the voltage drop effect, which is well-known for nanoheterostructural SC, is minimal.

Влияние электродов на параметры солнечно-слепых детекторов УФ излучения

The influence of electrode topology on the electrical and photoelectric characteristics of metal/semiconductor/metal structures was investigated. Gallium oxide films were obtained by radio-frequency sputtering of a Ga2O3 target onto sapphire substrates with the (0001) orientation. Two types of electrodes were formed on the surface of the oxide films: two parallel electrodes with an interelectrode distance of 250 mkm and interdigitated ones. The distance between the "fingers" of the detectors of the second type was 50, 30, 10, and 5 mkm. Regardless of the type of contacts, the structures exhibit sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. Detectors of the second type with an interelectrode distance of 5 μm demonstrate the highest values of the photocurrent Iph = 3.8 mA and detectivity D * = 5.54⋅10^15 cmHz^0.5W^-1.