High thermal stability and low Gilbert damping constant of CoFeB/MgO bilayer with perpendicular magnetic anisotropy by Al capping and rapid thermal annealing

Fe100-xPtx single-layered films with Pt contents (x) = 32~69 at.% were deposited on natural-oxidized Si(100) substrate by dc magnetron sputtering. Then the films were post-annealed at 700 °C for 3 min by a rapid thermal annealing (RTA) with a high heating ramp rate of 100 °C/sec. Experimental results show that FePt film presented (111) preferred orientation and tended to in-plane magnetic anisotropy as the content of Pt was 32 at.%. When the Pt content was increased to 55 at.%, (001)-textured FePt film was obtained and presented perpendicular magnetic anisotropy. Its out-of-plane coercivity (Hc⊥), saturation magnetization (Ms) and out-of-plane squareness (S⊥) reached to 12.7 kOe, 375 emu/cm3 and 0.8, respectively. These results reveal its significant potential as perpendicular magnetic recording media for high-density recording. Further increasing the Pt content to 69 at.%, the coercivity of FePt film was decreased drastically to below 1 kOe and tended towards in-plane magnetic anisotropy.

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High Thermal Stability of Perpendicular Magnetic anisotropy in the MgO/CoFeB/W thin films

Applied Surface Science ◽

10.1016/j.apsusc.2021.150857 ◽

2021 ◽

pp. 150857

Author(s):

Y.Q. Guo ◽

H. Bai ◽

Q.R. Cui ◽

L.M. Wang ◽

Y.C. Zhao ◽

...

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Magnetic Anisotropy ◽

Perpendicular Magnetic Anisotropy ◽

High Thermal Stability ◽

Thermal Stability Of

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Strong Perpendicular Magnetic Anisotropy with High Thermal Stability in Annealed Co/Native Oxide/Pd Multilayers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.634-638.2506 ◽

2013 ◽

Vol 634-638 ◽

pp. 2506-2511

Author(s):

Qin Li Lv ◽

Jian Wang Cai ◽

Tao Li

Keyword(s):

Thermal Stability ◽

Magnetic Anisotropy ◽

Annealing Temperature ◽

Perpendicular Magnetic Anisotropy ◽

Anisotropy Field ◽

High Thermal Stability ◽

Native Oxide ◽

Perpendicular Anisotropy ◽

Sharp Transition ◽

Out Of Plane

A novel perpendicular magnetic material was obtained in the annealed Co/native oxide/Pd multilayer films. Upon thermal annealing in a vacuum, a sharp transition of magnetic anisotropy from in-plane to out-of-plane is observed for the Co/native oxide/Pd multilayers with 20 Å Co layers. These annealed Co/native oxide/Pd multilayers possess extremely large effect perpendicular anisotropy field (Heff) and perpendicular anisotropy energy (Ku), with the maximum Heff of 17 kOe and Ku of 5.1×106 erg/cm3 obtained in the annealed Co(20 Å)/native oxide/Pd(10 Å) multilayers. Moreover, the large perpendicular magnetic anisotropy sustains with annealing temperature varying from 200°C to 400°C, indicative of high thermal stability. The present results open the way to a third alternative for the realization of thermally stable perpendicular magnetic electrodes of tunnel junctions.

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Ultra-high thermal stability of perpendicular magnetic anisotropy in the W buffered CoFeB/MgO stacks with Zr dusting layers

Applied Physics Letters ◽

10.1063/5.0072848 ◽

2022 ◽

Vol 120 (2) ◽

pp. 022402

Author(s):

Q. X. Guo ◽

K. Wang ◽

H. Bai ◽

Z. C. Zheng ◽

L. H. Wang ◽

...

Keyword(s):

Thermal Stability ◽

Magnetic Anisotropy ◽

Perpendicular Magnetic Anisotropy ◽

High Thermal Stability ◽

Thermal Stability Of

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The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽

10.1039/d0ra00459f ◽

2020 ◽

Vol 10 (19) ◽

pp. 11219-11224

Author(s):

Wei Zhang ◽

Xiaoxiong Jia ◽

Rui Wang ◽

Huihui Liu ◽

Zhengyu Xiao ◽

...

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Magnetic Anisotropy ◽

High Stability ◽

Essential Role ◽

Perpendicular Magnetic Anisotropy ◽

Low Energy ◽

High Resistivity ◽

Excellent Thermal Stability ◽

Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

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