Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

AIP Advances ◽

10.1063/1.4871996 ◽

2014 ◽

Vol 4 (4) ◽

pp. 047122 ◽

Author(s):

T. M. Al tahtamouni ◽

J. Y. Lin ◽

H. X. Jiang

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Contact Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

And Performance ◽

Ultraviolet Light Emitting Diodes ◽

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Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.06.030 ◽

2016 ◽

Vol 97 ◽

pp. 371-377 ◽

Author(s):

Jie Sun ◽

Huiqing Sun ◽

Xinyan Yi ◽

Xian Yang ◽

Xuancong Fan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

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Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.03.055 ◽

2017 ◽

Vol 107 ◽

pp. 49-55 ◽

Author(s):

Jie Sun ◽

Huiqing Sun ◽

Xinyan Yi ◽

Xian Yang ◽

Tianyi Liu ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Efficiency Enhancement ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

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Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes

AIP Advances ◽

10.1063/1.5062603 ◽

2018 ◽

Vol 8 (12) ◽

pp. 125126

Author(s):

Joosun Yun ◽

Yukio Kashima ◽

Hideki Hirayama

Keyword(s):

Photonic Crystal ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Contact Layer ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

Applied Physics Express ◽

10.7567/apex.11.012101 ◽

2017 ◽

Vol 11 (1) ◽

pp. 012101 ◽

Author(s):

Yukio Kashima ◽

Noritoshi Maeda ◽

Eriko Matsuura ◽

Masafumi Jo ◽

Takeshi Iwai ◽

...

Keyword(s):

Photonic Crystal ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Contact Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer

Light-Emitting Devices, Materials, and Applications ◽

10.1117/12.2506918 ◽

2019 ◽

Author(s):

Jianping Zhang ◽

Ying Gao ◽

Ling Zhou ◽

Young-Un Gil ◽

Kyoung-Min Kim

Keyword(s):

Ultraviolet Light ◽

Ohmic Contact ◽

Light Emitting Diodes ◽

Contact Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

Optics Express ◽

10.1364/oe.25.00a639 ◽

2017 ◽

Vol 25 (16) ◽

pp. A639 ◽

Author(s):

Guo-Dong Hao ◽

Naoki Tamari ◽

Toshiyuki Obata ◽

Toru Kinoshita ◽

Shin-ichiro Inoue

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Current Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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