Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation
2010 ◽
Vol 57
(5)
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pp. 1009-1014
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2019 ◽
Vol 22
(2)
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pp. 1901053
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2017 ◽
Vol 71
(4)
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pp. 209-214
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2013 ◽
Vol 28
(10)
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pp. 105002
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2015 ◽
Vol 135
(6)
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pp. 192-198
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